30V, 208A, 1.9m N-channel Power SGT MOSFETJMSL0302PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 208 ARDS(ON)_Typ(@VGS=10V 1.3 mWRDS(ON)_Typ(@VGS=4.5V 1.9 mWApplications Load Switch PWM Application Pow

30V, 94A, 2.4m N-channel Power SGT MOSFETJMSL0302PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 94 ARDS(ON)_Typ(@VGS=10V 1.8 mWRDS(ON)_Typ(@VGS=4.5V 2.4 mWApplications Load Switch PWM Application Power

JMSL0302AU30V 1.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS30 V High Current Capability VGS(th)_Typ1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 145 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)1.2 m RDS(ON)_Typ (@ VGS = 4.5V)2.0 mApplications Power Management i

JMSL0302AG30V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS30 V High Current Capability VGS(th)1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 178 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V)1.3 m RDS(ON) (@ VGS = 4.5V)2.0 mApplications Power Management in Computing,

JMSL0302AK30V 1.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 161 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power Mana

JMSL0302AU30V 1.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A RDS(ON)_Typ (@ VGS = 10V)1.2 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)2.0 m Halogen-free and RoHS-compliant

JMSL0302AG30V 1.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 178 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.3 m RDS(ON) (@ VGS = 4.5V)2.0 m Halogen-free and RoHS-compliantApplications

JMSL0302DG30V 1.3m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON)Parameter Typ. Unit VDS Enhanced ESD @ HBM Rating up to 1.0kV 30 V VGS(th)1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 174 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V)2.3 mApplicat

JMSL0302BU30V 1.5m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 135 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.5 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power