JMPL1025AE
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JMPL1025AE
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 114
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 49
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 53
ns
Cossⓘ - Выходная емкость: 427
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025
Ohm
Тип корпуса:
TO263
Аналог (замена) для JMPL1025AE
-
подбор ⓘ MOSFET транзистора по параметрам
JMPL1025AE
Datasheet (PDF)
..1. Size:1032K jiejie micro
jmpl1025ae.pdf 
JMPL1025AE-100V 21mW P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -49 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 21 mW RDS(ON)_Typ (@ VGS = -4.5V) 29 mW Applications Battery Mana
5.1. Size:358K jiejie micro
jmpl1025ak.pdf 
JMPL1025AK-100V 22m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -46 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)22 m RDS(ON)_Typ (@ VGS = -4.5V)31 m 100% UIS Tested, 100%
8.1. Size:1239K jiejie micro
jmpl1050pu.pdf 
-100V, -17A, 51m P-channel Power Planar MOSFETJMPL1050PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS -100 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -17 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 39 mWRDS(ON)_Typ(@VGS=-4.5V 51 mWApplications Load Switch
8.2. Size:356K jiejie micro
jmpl1050ak.pdf 
JMPL1050AK-100V 37m P-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -30 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)37 m RDS(ON)_Typ (@ VGS = -4.5V)50 m 100% UIS Tested, 100%
8.3. Size:376K jiejie micro
jmpl1050ap.pdf 
JMPL1050AP-100V 39m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -6.3 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)39 m RDS(ON)_Typ (@ VGS = -4.5V)57 m 100% UIS Tested, 100%
8.4. Size:1355K jiejie micro
jmpl1050pg.pdf 
-100V, -28A, 51m P-channel Power Planar MOSFETJMPL1050PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -100 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -28 ARDS(ON)_Typ(@VGS=-10V 37 mWApplications RDS(ON)_Typ(@VGS=-4.5V 51 mW Load Switch PWM Application
8.5. Size:348K jiejie micro
jmpl1050akq.pdf 
JMPL1050AKQ-100V 37m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -36 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = -10V)37 m RDS(ON)_Typ (@ VGS = -4.5V)50 m Halogen-free and RoHS-
8.6. Size:365K jiejie micro
jmpl1050apd.pdf 
JMPL1050APD-100V 39mDual P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -6.6 A RDS(ON)_Typ (@ VGS = -10V)39 RoHS and Halogen-Free Compliant m RDS(ON)_Typ (@ VGS = -4.5V)57 m 100% UIS Tes
8.7. Size:1311K jiejie micro
jmpl1050pk.pdf 
-100V, -22A, 60m P-channel Power Planar MOSFETJMPL1050PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -100 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -22 ARDS(ON)_Typ(@VGS=-10V 48 mWApplications RDS(ON)_Typ(@VGS=-4.5V 60 mW Load Switch PWM Application
8.8. Size:402K jiejie micro
jmpl1050ag.pdf 
JMPL1050AG-100V 36m P-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -27 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)36 m RDS(ON)_Typ (@ VGS = -4.5V)48 m 100% UIS Tested, 100%
8.9. Size:355K jiejie micro
jmpl1050ay.pdf 
JMPL1050AY-100V 40m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -10 A RDS(ON)_Typ (@ VGS = -10V)40 RoHS and Halogen-Free Compliant m RDS(ON)_Typ (@ VGS = -4.5V)53 m 100% UIS Tested, 100%
8.10. Size:278K jiejie micro
jmpl1050ae.pdf 
JMPL1050AE-100V 36m P-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -36 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)36 m RDS(ON)_Typ (@ VGS = -4.5V)50 m 100% UIS Tested, 100%
8.11. Size:353K jiejie micro
jmpl1050auq.pdf 
JMPL1050AUQ-100V 38m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -27 A RDS(ON)_Typ (@ VGS = -10V)38 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = -4.5V)51 m Halogen-free and RoH
8.12. Size:408K jiejie micro
jmpl1050agq.pdf 
JMPL1050AGQ-100V 36m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -30 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = -10V)36 m RDS(ON)_Typ (@ VGS = -4.5V)48 m Halogen-free and RoHS-
8.13. Size:376K jiejie micro
jmpl1050au.pdf 
JMPL1050AU-100V 38m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -26 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)38 m RDS(ON)_Typ (@ VGS = -4.5V)51 m 100% UIS Tested, 100% R
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History: IRFB4321PBF
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