JMSH0601BG60V 1.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 303 A RDS(ON)_Typ (@ VGS = 10V)1.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Management in Computing, CE,

JMSH0601BGQ60V 1.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

JMSH0601AG60V 1.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.4 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communic

JMSH0601ATLQ60V 1.2m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultralow ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 328 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli

60V, 332A, 1.2m N-channel Power SGT MOSFETJMSH0601PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 332 ARDS(ON)_Typ(@VGS=10V 1.2 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1

JMSH0601ATL60V 1.2m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 348 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.2 m Halogen-free and RoHS-compliantApplications Power Management in Computi

JMSH0601AGQ60V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 225 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications