JMSH1003TTL datasheet, подбор замены

 ..1. Size:1257K  jiejie micro
 jmsh1003ttl.pdf 

100V, 184A, 3.5m N-channel Power SGT MOSFET JMSH1003TTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 184 A RDS(ON)_Typ(@VGS=10V 3.5 mW Applications Load Switch PWM Application Power Management PowerJE 10

 5.1. Size:1222K  jiejie micro
 jmsh1003tf.pdf 

100V, 80A, 4.4m N-channel Power SGT MOSFET JMSH1003TF Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications Load Switch PWM Application Power Management D G S TO-22

 5.2. Size:635K  jiejie micro
 jmsh1003tc jmsh1003te.pdf 

JMSH1003TC JMSH1003TE 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 223 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3 Pb-free L

 6.1. Size:1188K  jiejie micro
 jmsh1003ne7.pdf 

100V, 167A, 3.1m N-channel Power SGT MOSFET JMSH1003NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 167 A RDS(ON)_Typ(@VGS=10V 3.1 mW Applications Load Switch PWM Application Power Management TO-263-7L

 6.2. Size:381K  jiejie micro
 jmsh1003atlq.pdf 

JMSH1003ATLQ 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap

 6.3. Size:327K  jiejie micro
 jmsh1003agq.pdf 

JMSH1003AGQ 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 6.4. Size:313K  jiejie micro
 jmsh1003ae7q.pdf 

JMSH1003AE7Q 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 196 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

 6.5. Size:380K  jiejie micro
 jmsh1003atl.pdf 

JMSH1003ATL 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant Applications Power Management in Compu

 6.6. Size:746K  jiejie micro
 jmsh1003nc jmsh1003ne.pdf 

JMSH1003NC JMSH1003NE 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 213 A RDS(ON) (@ VGS = 10V) 3.0 Halogen-free and RoHS-compliant mW Applications Motor Driving in Power Tool, E-vehicle, Robotics Current Switc

 6.7. Size:354K  jiejie micro
 jmsh1003agwq.pdf 

JMSH1003AGWQ 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 178 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V) 2.8 m Automated Optical Inspection (AOI) Pb-free Lead Plat

 6.8. Size:367K  jiejie micro
 jmsh1003ng.pdf 

JMSH1003NG 100V 3.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 159 A RDS(ON)_Typ (@ VGS = 10V) 3.1 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial

 6.9. Size:326K  jiejie micro
 jmsh1003ag.pdf 

JMSH1003AG 100V 2.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 144 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.8 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial A