JMH65R400MKFD datasheet, подбор замены

 ..1. Size:1203K  jiejie micro
 jmh65r400mkfd.pdf 

650V, 7.0A, 350m N-channel Power SuperJunction MOSFET JMH65R400MKFD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 650 V 100% Vds Tested VGS(th)_Typ 4.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 7.0 A RDS(ON)_Typ(@VGS=10V 350 mW Applications SMPS with PFC Flyback and LLC topologies Silve

 4.1. Size:1192K  jiejie micro
 jmh65r400mplnfd.pdf 

650V, 9A, 359m N-channel Power SuperJunction MOSFET JMH65R400MPLNFD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 650 V 100% Vds Tested VGS(th)_Typ 3.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 9.0 A RDS(ON)_Typ(@VGS=10V 359 mW Applications SMPS with PFC Flyback and LLC topologies Silve

 4.2. Size:1250K  jiejie micro
 jmh65r400mffd.pdf 

650V, 9.0A, 338m N-channel Power SuperJunction MOSFET JMH65R400MFFD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 650 V 100% Vds Tested VGS(th)_Typ 4.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 9.0 A RDS(ON)_Typ(@VGS=10V 338 mW Applications SMPS with PFC,Flyback and LLC topologies Silver ATX

 7.1. Size:350K  jiejie micro
 jmh65r430af.pdf 

JMH65R430AF 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating Hal

 7.2. Size:341K  jiejie micro
 jmh65r430acfp.pdf 

JMH65R430ACFP 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating H

 7.3. Size:359K  jiejie micro
 jmh65r430akq.pdf 

JMH65R430AKQ 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A Ultra Fast Body Diode RDS(ON)_Typ (@ VGS = 10V) 370 m Eoss@400V 2.2 J 100% UIS Tested, 100% Rg Tested P

 7.4. Size:348K  jiejie micro
 jmh65r430apln.pdf 

JMH65R430APLN 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 10.4 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 370 m Eoss@400V 2.2 J Pb-free Lead Plating H

 7.5. Size:331K  jiejie micro
 jmh65r430ae.pdf 

JMH65R430AE 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating Hal

 7.6. Size:363K  jiejie micro
 jmh65r430ak.pdf 

JMH65R430AK 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 370 m Eoss@400V 2.2 J Pb-free Lead Plating Hal