JMSH1004NG datasheet, подбор замены

 ..1. Size:338K  jiejie micro
 jmsh1004ng.pdf 

JMSH1004NG 100V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 121 A RDS(ON) (@ VGS = 10V) 4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics

 5.1. Size:364K  jiejie micro
 jmsh1004nc jmsh1004ne.pdf 

JMSH1004NC JMSH1004NE 100V 4.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 143 A RDS(ON) (@ VGS = 10V) 4.1 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicl

 6.1. Size:1253K  jiejie micro
 jmsh1004mc.pdf 

100V, 120A, 4.5m N-channel Power SGT MOSFET JMSH1004MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 117 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S TO

 6.2. Size:311K  jiejie micro
 jmsh1004bgq.pdf 

JMSH1004BGQ 100V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 138 A RDS(ON)_Typ (@ VGS = 10V) 3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

 6.3. Size:1065K  jiejie micro
 jmsh1004ac jmsh1004ae.pdf 

JMSH1004AC JMSH1004AE 100V 3.0mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 190 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 3.0 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Aut

 6.4. Size:1205K  jiejie micro
 jmsh1004rg.pdf 

100V, 117A, 4.6m N-channel Power SGT MOSFET JMSH1004RG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 117 A RDS(ON)_Typ(@VGS=10V 4.6 mW Applications Load Switch PWM Application Power Management D G S PD

 6.5. Size:335K  jiejie micro
 jmsh1004beq.pdf 

JMSH1004BEQ 100V 3.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 160 A RDS(ON)_Typ (@ VGS = 10V) 3.5 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicati

 6.6. Size:956K  jiejie micro
 jmsh1004bc jmsh1004be.pdf 

JMSH1004BC JMSH1004BE 100V 3.7mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 134 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.7 mW Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 6.7. Size:1060K  jiejie micro
 jmsh1004aeq.pdf 

JMSH1004AEQ 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 216 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2

 6.8. Size:448K  jiejie micro
 jmsh1004bg.pdf 

JMSH1004BG 100V 3.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 3.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Auto

 6.9. Size:353K  jiejie micro
 jmsh1004bgwq.pdf 

JMSH1004BGWQ 100V 3.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 152 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V) 3.6 m Automated Optical Inspection (AOI) Pb-free Lead Plat