Справочник MOSFET. DMN2004DWK

 

DMN2004DWK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN2004DWK
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.54 A
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: SOT363

 Аналог (замена) для DMN2004DWK

 

 

DMN2004DWK Datasheet (PDF)

 ..1. Size:278K  diodes
 dmn2004dwk.pdf

DMN2004DWK DMN2004DWK

DMN2004DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Ter

 6.1. Size:284K  diodes
 dmn2004dmk.pdf

DMN2004DWK DMN2004DWK

DMN2004DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Term

 7.1. Size:204K  diodes
 dmn2004vk.pdf

DMN2004DWK DMN2004DWK

DMN2004VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termin

 7.2. Size:189K  diodes
 dmn2004k.pdf

DMN2004DWK DMN2004DWK

DMN2004KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance: RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec

 7.3. Size:172K  diodes
 dmn2004wk.pdf

DMN2004DWK DMN2004DWK

DMN2004WKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish

 7.4. Size:184K  diodes
 dmn2004tk.pdf

DMN2004DWK DMN2004DWK

DMN2004TKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte T

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