JMSH1002NTL100V 2.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 337 A RDS(ON) (@ VGS = 10V)2.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics

JMSH1002NCJMSH1002NE100V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 284 A RDS(ON) (@ VGS = 10V)2.2 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicl

100V, 274A, 3.2m N-channel Power SGT MOSFETJMSH1002NSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 274 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.2 mWApplications Load Switch PWM Application Power Man

100V, 215A, 2.3m N-channel Power SGT MOSFETJMSH1002YTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 215 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.3 mWApplications Load Switch PWM Application Power Ma

JMSH1002AEQ100V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

JMSH1002TCJMSH1002TE100V 2.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

JMSH1002ACJMSH1002AE100V 1.6mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Ind

JMSH1002BCJMSH1002BE100V 2.1m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.1 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., I

100V, 241A, 2.2m N-channel Power SGT MOSFETJMSH1002REProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 241 A Pb-free plating RDS(ON)_Typ(@VGS=10V) 2.2 mWApplications Load Switch PWM Application Power Mana

JMSH1002AS100V 1.7mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus

JMSH1002ASQ100V 1.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V)1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

JMSH1002YCJMSH1002YE100V 3.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

100V, 280A, 1.6m N-channel Power SGT MOSFETJMSH1002TTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 280 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementPowerJE10