JMSH1002YTL
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JMSH1002YTL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 313
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 215
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 57
ns
Cossⓘ - Выходная емкость: 1210
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003
Ohm
Тип корпуса:
TOLL
Аналог (замена) для JMSH1002YTL
-
подбор ⓘ MOSFET транзистора по параметрам
JMSH1002YTL
Datasheet (PDF)
..1. Size:1251K jiejie micro
jmsh1002ytl.pdf 
100V, 215A, 2.3m N-channel Power SGT MOSFETJMSH1002YTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 215 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.3 mWApplications Load Switch PWM Application Power Ma
5.1. Size:1075K jiejie micro
jmsh1002yc jmsh1002ye.pdf 
JMSH1002YCJMSH1002YE100V 3.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS
6.1. Size:339K jiejie micro
jmsh1002aeq.pdf 
JMSH1002AEQ100V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
6.2. Size:1077K jiejie micro
jmsh1002tc jmsh1002te.pdf 
JMSH1002TCJMSH1002TE100V 2.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS
6.3. Size:396K jiejie micro
jmsh1002nc jmsh1002ne.pdf 
JMSH1002NCJMSH1002NE100V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 284 A RDS(ON) (@ VGS = 10V)2.2 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicl
6.4. Size:657K jiejie micro
jmsh1002ac jmsh1002ae.pdf 
JMSH1002ACJMSH1002AE100V 1.6mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Ind
6.5. Size:1202K jiejie micro
jmsh1002ns.pdf 
100V, 274A, 3.2m N-channel Power SGT MOSFETJMSH1002NSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 274 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.2 mWApplications Load Switch PWM Application Power Man
6.6. Size:341K jiejie micro
jmsh1002bc jmsh1002be.pdf 
JMSH1002BCJMSH1002BE100V 2.1m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.1 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., I
6.7. Size:1155K jiejie micro
jmsh1002re.pdf 
100V, 241A, 2.2m N-channel Power SGT MOSFETJMSH1002REProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 241 A Pb-free plating RDS(ON)_Typ(@VGS=10V) 2.2 mWApplications Load Switch PWM Application Power Mana
6.8. Size:623K jiejie micro
jmsh1002as.pdf 
JMSH1002AS100V 1.7mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus
6.9. Size:355K jiejie micro
jmsh1002asq.pdf 
JMSH1002ASQ100V 1.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V)1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application
6.10. Size:1261K jiejie micro
jmsh1002ttl.pdf 
100V, 280A, 1.6m N-channel Power SGT MOSFETJMSH1002TTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 280 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementPowerJE10
6.11. Size:367K jiejie micro
jmsh1002ntl.pdf 
JMSH1002NTL100V 2.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 337 A RDS(ON) (@ VGS = 10V)2.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics
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