DMN2027LK3 - описание и поиск аналогов

 ..1. Size:652K  diodes
 dmn2027lk3.pdf 

A Product Line of Diodes Incorporated DMN2027LK3 20V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 21m @ VGS= 10V 17.0A Green component and RoHS compliant (Note 1) 20V 27m @ VGS

 8.1. Size:275K  diodes
 dmn2028ufdh.pdf 

DMN2028UFDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C ESD Protected Up To 2kV 20m @ VGS = 10V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 6.5A Halogen and Antimony Free. Green Device (Note 3) 20V

 8.2. Size:153K  diodes
 dmn2020lsn.pdf 

DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low

 8.3. Size:308K  diodes
 dmn2020ufcl.pdf 

DMN2020UFCL 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25 C applications Low RDS(ON) minimizes conduction losses 14 m @ VGS = 4.5V 9 A 20V PCB footprint of 2.56mm2 20 m @ VGS = 2.5V 7.5 A ESD Protected Gate Totall

 8.4. Size:573K  diodes
 dmn2023ucb4.pdf 

DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features IS Built-in G-S Protection Diode Against ESD 2kV HBM V(BR)DSS RSS(ON) Package TA = +25 C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 24V 26m @ VGS = 4.5V X1-WLB1818-4 6.0A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High R

 8.5. Size:307K  diodes
 dmn2022ufdf.pdf 

DMN2022UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25 C Low Gate Threshold Voltage 22m @ VGS = 4.5V 7.9A Fast Switching Speed ESD Protected Gate 26m @ VGS = 2.5V 7.2A 20V Totally Lead-Free & Fully RoHS Comp

 8.6. Size:265K  diodes
 dmn2029usd.pdf 

DMN2029USD 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max Package TA = +25 C Low On-Resistance 25m @ VGS = 4.5V 5.8A Fast Switching Speed 20V SO-8 35m @ VGS = 2.5V 4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 8.7. Size:90K  tysemi
 dmn2020lsn.pdf 

Product specification DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals F