Справочник MOSFET. DMN2114SN

 

DMN2114SN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN2114SN
   Маркировка: NS2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
   Cossⓘ - Выходная емкость: 180 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SC59

 Аналог (замена) для DMN2114SN

 

 

DMN2114SN Datasheet (PDF)

 ..1. Size:149K  diodes
dmn2114sn.pdf

DMN2114SN DMN2114SN

DMN2114SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, Green Molding Cards, and Battery Power Circuits Compound. UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Note 2) Moistu

 ..2. Size:52K  tysemi
dmn2114sn.pdf

DMN2114SN

Product specificationDMN2114SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, Green Molding Cards, and Battery Power Circuits Compound. UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (N

 8.1. Size:215K  diodes
dmn2112sn.pdf

DMN2114SN DMN2114SN

DMN2112SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, "Green" Molding Compound. Cards, and Battery Powered Circuits UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Note 2) Moisture Sen

 8.2. Size:53K  tysemi
dmn2112sn.pdf

DMN2114SN

Product specificationDMN2112SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, "Green" Molding Compound. Cards, and Battery Powered Circuits UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Not

 9.1. Size:120K  diodes
dmn2104l-7.pdf

DMN2114SN DMN2114SN

DMN2104LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 53m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 104m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gat

 9.2. Size:128K  diodes
dmn2170u-7.pdf

DMN2114SN DMN2114SN

DMN2170UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 70m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 100m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-

 9.3. Size:111K  diodes
dmn2100udm.pdf

DMN2114SN DMN2114SN

DMN2100UDMN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-26 55 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 70 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-

 9.4. Size:150K  diodes
dmn2170u.pdf

DMN2114SN DMN2114SN

DMN2170UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 70m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 100m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-

 9.5. Size:214K  diodes
dmn21d2ufb.pdf

DMN2114SN DMN2114SN

DMN21D2UFB20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Very low Gate Threshold Voltage, 1.0V max ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 0.99 @ VGS = 4.5V 760mA Ultra-Small Surface Mount Package 1mm x 0.6mm Low Package Profile, 0.5mm Maximum Package height

 9.6. Size:124K  diodes
dmn2104l.pdf

DMN2114SN DMN2114SN

DMN2104LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 53m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 104m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gat

Другие MOSFET... DMN2027USS , DMN2028USS , DMN2040LTS , DMN2041LSD , DMN2050L , DMN2075U , DMN2100UDM , DMN2112SN , 60N06 , DMN2170U , DMN2215UDM , DMN2230U , DMN2300U , DMN2300UFB , DMN2300UFB4 , DMN2400UFB4 , DMN2400UV .

 

 
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