JMSL0605AGDQ
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JMSL0605AGDQ
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 38
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 61
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 64
ns
Cossⓘ - Выходная емкость: 596
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055
Ohm
Тип корпуса: PDFN5X6-8L-D
Аналог (замена) для JMSL0605AGDQ
-
подбор ⓘ MOSFET транзистора по параметрам
JMSL0605AGDQ
Datasheet (PDF)
..1. Size:346K jiejie micro
jmsl0605agdq.pdf 
JMSL0605AGDQ60V 4.4m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 61 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.4 m RDS(ON)_Typ (@ VGS = 4.5V)5.6 m Halogen-free and RoHS-compliant AEC-Q101
3.1. Size:311K jiejie micro
jmsl0605agd.pdf 
JMSL0605AGD60V 4.4m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V)4.4 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)5.6 m Halogen-free and RoHS-compliantApplicatio
6.1. Size:1240K jiejie micro
jmsl0605pg.pdf 
60V, 100A, 5.5m N-channel Power SGT MOSFETJMSL0605PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.9 mWRDS(ON)_Typ(@VGS=4.5V 5.5 mWApplications Load Switch PW
7.1. Size:277K 1
jmsl0606ag.pdf 
JMSL0606AG60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V)5.2 mApplications Power Managerment in Telecom., Industrial
7.2. Size:319K jiejie micro
jmsl0609ap.pdf 
JMSL0609AP60V 7.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 13.6 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.5 m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliantApplications Power Manag
7.3. Size:397K jiejie micro
jmsl0601bg.pdf 
JMSL0601BG60V 1.25m N-Ch Power MOSFETFeaturesProduct Summary Low RDS(ON)Parameter Value Unit Low Gate Charge VDS60 V VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 226 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.25 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)1.8 mApplications Power Mana
7.4. Size:352K jiejie micro
jmsl0606akq.pdf 
JMSL0606AKQ60V 4.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 93 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.6 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101 Qu
7.5. Size:347K jiejie micro
jmsl0601ag.pdf 
JMSL0601AG60V 0.90m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 275 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliantApplications Power Mana
7.6. Size:347K jiejie micro
jmsl0602ag.pdf 
JMSL0602AG60V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.4 m Halogen-free and RoHS-compliantApplications Power Manage
7.7. Size:1265K jiejie micro
jmsl0609ppd.pdf 
60V, 11A, 11.7m N-channel Power SGT MOSFETJMSL0609PPDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.5 mWRDS(ON)_Typ(@VGS=4.5V 11.7 mWApplications Load Switch P
7.8. Size:1193K jiejie micro
jmsl0608pg.pdf 
60V, 79A, 8m N-channel Power SGT MOSFETJMSL0608PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 79 ARDS(ON)_Typ(@VGS=10V 6.2 mWRDS(ON)_Typ(@VGS=4.5V 8.0 mWApplications Load Switch PWM Application Power
7.9. Size:1246K jiejie micro
jmsl0606pe.pdf 
60V, 117A, 5.3m N-channel Power SGT MOSFETJMSL0606PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 117 ARDS(ON)_Typ(@VGS=10V 4.2 mWRDS(ON)_Typ(@VGS=4.5V 5.3 mWApplications Load Switch PWM Application Po
7.10. Size:343K jiejie micro
jmsl0606pu.pdf 
JMSL0606PU60V 3.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 69 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.9 m RDS(ON)_Typ (@ VGS = 4.5V)5.1 m Halogen-free and RoHS-compliantApplications Power Man
7.11. Size:338K jiejie micro
jmsl0606auq.pdf 
JMSL0606AUQ60V 5.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.0 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101
7.12. Size:518K jiejie micro
jmsl0606au.pdf 
JMSL0606AU60V 5.0mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 5.0 mW RDS(ON) (@ VGS = 4.5V)6.6 mW Halogen-free and RoHS-compliantApplications Power Management in Compu
7.13. Size:337K jiejie micro
jmsl0609auq.pdf 
JMSL0609AUQ60V 7.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 44 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.5 m RDS(ON)_Typ (@ VGS = 4.5V)9.4 m Halogen-free and RoHS-compliant AEC-Q101 Qu
7.14. Size:1284K jiejie micro
jmsl0608pk.pdf 
60V, 53A, 8.7m N-channel Power SGT MOSFETJMSL0608PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 53 ARDS(ON)_Typ(@VGS=10V 6.8 mWApplications RDS(ON)_Typ(@VGS=4.5V 8.7 mW Load Switch PWM Application Power
7.15. Size:1179K jiejie micro
jmsl0608pgd.pdf 
60V, 37A, 11m Dual N-channel Power SGT MOSFETJMSL0608PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 37 ARDS(ON)_Typ(@VGS=10V 8 mWApplications RDS(ON)_Typ(@VGS=4.5V 11 mW Load Switch PWM Application Pow
7.16. Size:413K jiejie micro
jmsl0601agq.pdf 
JMSL0601AGQ60V 0.90m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 315 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliant AEC-Q101
7.17. Size:378K jiejie micro
jmsl0603bgq.pdf 
JMSL0603BGQ60V 2.4m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 147 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.4 m RDS(ON)_Typ (@ VGS = 4.5V)3.4 m Halogen-free and RoHS-compliant AEC-Q101
7.18. Size:327K jiejie micro
jmsl0606ap.pdf 
JMSL0606AP60V 5.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 15 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.3 m RDS(ON)_Typ (@ VGS = 4.5V)6.7 m Halogen-free and RoHS-compliantApplications Power
7.19. Size:1273K jiejie micro
jmsl0602pg.pdf 
60V, 209A, 2.1m N-channel Power SGT MOSFETJMSL0602PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 209 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.7 mWRDS(ON)_Typ(@VGS=4.5V 2.1 mWApplications Load Switch PW
7.20. Size:402K jiejie micro
jmsl0609akq.pdf 
JMSL0609AKQ60V 7.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V)7.4 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Auto
7.21. Size:353K jiejie micro
jmsl0603ak.pdf 
JMSL0603AK60V 2.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.6 m RDS(ON)_Typ (@ VGS = 4.5V)3.3 Halogen-free and RoHS-compliant mApplications Power M
7.22. Size:1233K jiejie micro
jmsl0608pp.pdf 
60V, 14A, 9.4m N-channel Power SGT MOSFETJMSL0608PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 14 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.9 mWRDS(ON)_Typ(@VGS=4.5V 9.4 mWApplications Load Switch PWM
7.23. Size:1291K jiejie micro
jmsl0603pg.pdf 
60V, 154A, 2.7m N-channel Power SGT MOSFETJMSL0603PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 154 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.1 mWRDS(ON)_Typ(@VGS=4.5V 2.7 mWApplications Load Switch PW
7.24. Size:332K jiejie micro
jmsl0606pg.pdf 
JMSL0606PG60V 3.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m RDS(ON)_Typ (@ VGS = 4.5V)4.5 m Halogen-free and RoHS-compliantApplications Power Ma
7.25. Size:348K jiejie micro
jmsl0609ag.pdf 
JMSL0609AG60V 7.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 43 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 m RDS(ON)_Typ (@ VGS = 4.5V)9.0 m Halogen-free and RoHS-compliantApplications Power Managem
7.26. Size:414K jiejie micro
jmsl0609agq.pdf 
JMSL0609AGQ60V 7.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 m RDS(ON)_Typ (@ VGS = 4.5V)9.0 m Halogen-free and RoHS-compliant AEC-Q101
7.27. Size:1201K jiejie micro
jmsl0601tg.pdf 
60V, 294A, 1.1m N-channel Power SGT MOSFETJMSL0601TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.3 V Halogen-free; RoHS-compliantID(@VGS=10V) 294 ARDS(ON)_Typ(@VGS=10V 0.9 mWRDS(ON)_Typ(@VGS=4.5V 1.1 mWApplications Load Switch PWM Application Pow
7.28. Size:371K jiejie micro
jmsl0609au.pdf 
JMSL0609AU60V 7.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 41 A RDS(ON)_Typ (@ VGS = 10V)7.5 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)9.4 m Halogen-free and RoHS-compliantApplications Power
7.29. Size:677K jiejie micro
jmsl060spgq.pdf 
60V, 283A, 1.4m N-channel Power SGT MOSFETJMSL060SPGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 283 ARDS(ON)_Typ(@VGS=10V 1.0 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 1.4 m AEC-Q101 QualifiedApplications
7.30. Size:315K jiejie micro
jmsl0603bg.pdf 
JMSL0603BG60V 2.4m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 142 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.4 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)3.4 mApplications
7.31. Size:284K jiejie micro
jmsl0606agd.pdf 
JMSL0606AGD60V 6.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 55 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.4 m RDS(ON) (@ VGS = 4.5V)7.6 m Halogen-free and RoHS-compliantApplications Power Managerment
7.32. Size:410K jiejie micro
jmsl0606agq.pdf 
JMSL0606AGQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Q
7.33. Size:379K jiejie micro
jmsl0601bgq.pdf 
JMSL0601BGQ60V 1.25m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.25 m RDS(ON)_Typ (@ VGS = 4.5V)1.8 m Halogen-free and RoHS-compliant AEC-Q1
7.34. Size:325K jiejie micro
jmsl0606ag.pdf 
JMSL0606AG60V 4.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m Pb-free Lead Plating RDS(ON) _Typ(@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliantApplications Power
7.35. Size:327K jiejie micro
jmsl0606ak.pdf 
JMSL0606AK60V 4.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)4.6 m RDS(ON) (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliantApplications Power Management in
7.36. Size:380K jiejie micro
jmsl0602agq.pdf 
JMSL0602AGQ60V 1.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 172 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.4 m Halogen-free and RoHS-compliant AEC-Q101
7.37. Size:329K jiejie micro
jmsl0604agq.pdf 
JMSL0604AGQ60V 3.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ(@ VGS = 10V) Pb-free Lead Plating 3.6 m RDS(ON) _Typ(@ VGS = 4.5V)4.7 m Halogen-free and RoHS-compliant AEC-Q101
7.38. Size:306K jiejie micro
jmsl0604ag.pdf 
JMSL0604AG60V 3.9m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ(@ VGS = 10V)3.9 m RDS(ON) _Typ(@ VGS = 4.5V)5.0 m Halogen-free and RoHS-compliantApplications Power Ma
7.39. Size:1257K jiejie micro
jmsl0608pu.pdf 
60V, 47A, 8.2m N-channel Power Trench MOSFETJMSL0608PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 47 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.3 mWRDS(ON)_Typ(@VGS=4.5V 8.2 mWApplications Load Switch P
7.40. Size:349K jiejie micro
jmsl0609ak.pdf 
JMSL0609AK60V 7.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliantApplications Power Managerme
7.41. Size:328K jiejie micro
jmsl0609apd.pdf 
JMSL0609APD60V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Ultra-low RDS(ON) Value Unit VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 9.5 mApplications Power Mana
7.42. Size:331K jiejie micro
jmsl0609agwq.pdf 
JMSL0609AGWQ60V 7.2m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V)7.2 mAutomated Optical Inspection (AOI) RDS(ON)_Typ (@ VGS
7.43. Size:330K jiejie micro
jmsl0606agwq.pdf 
JMSL0606AGWQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 mAutomated Optica
7.44. Size:321K jiejie micro
jmsl0606ac jmsl0606ae.pdf 
JMSL0606ACJMSL0606AE60V 5.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 115 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m RDS(ON)_Typ (@ VGS = 4.5V)7.0 m Halogen-free and RoHS-compliantApplications
7.45. Size:1192K jiejie micro
jmsl0602mg.pdf 
60V, 257A, 1.3m N-channel Power SGT MOSFETJMSL0602MGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 257 ARDS(ON)_Typ(@VGS=10V 1.0 mWRDS(ON)_Typ(@VGS=4.5V 1.3 mWApplications Load Switch PWM Application Po
Другие MOSFET... JMSL0406PGD
, JMSL0406PK
, JMSL0406PU
, JMSL040SAG
, JMSL040SAGQ
, JMSL040SMTL
, JMSL040SPG
, JMSL0605AGD
, 50N06
, JMSL0605PG
, JMSL0606AC
, JMSL0606AE
, , , , , .
