JMSL1013AGD100V 10.4mDualN-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 48 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.4 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)12.9 mApplicat

JMSL10130AUD100V 100m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 100 m RDS(ON)_Typ (@ VGS = 4.5V)123 m Halogen-free and RoHS-compliantApplications Power Ma

JMSL10130APD100V 111m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 2.4 A RDS(ON)_Typ (@ VGS = 10V)111 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)155 mApplications Power Managerment

JMSL10130AK100V 115m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 6A RDS(ON) (@ VGS = 10V)115 m Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V)144 mApplications Power Managerment in Telecom., Industria

100V, 6.7A, 131m N-channel Power SGT MOSFETJMSL10130PUDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 6.7 A Pb-free plating RDS(ON)_Typ(@VGS=10V 99 mWRDS(ON)_Typ(@VGS=4.5V 131 mWApplications Load Switch P

JMSL10130AGD100V 99mDualN-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V Fast Switching VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)99 m RDS(ON)_Typ (@ VGS = 4.5V)120 m Halogen-free and RoHS-compliantApplications

JMSL10130AP100V 107m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 2.4 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V)107 m RDS(ON)_Typ (@ VGS = 4.5V)140 mApplications Power Managerment in Telec

JMSL10130AY100V 110m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V Fast Switching VGS(th)_Typ1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 5.9 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 110 m RDS(ON)_Typ (@ VGS = 4.5V)137 m Halogen-free and RoHS-compliantApplications Power

JMSL10130AL100V 105m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.9 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 1.8 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V)105 m RDS(ON)_Typ (@ VGS = 4.5V)139 mApplications Power Managerment in Telecom., Industrial Auto

JMSL10130AM100V 105m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.9 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 2.1 A RDS(ON)_Typ (@ VGS = 10V) Halogen-free and RoHS-compliant 105 m RDS(ON)_Typ (@ VGS = 4.5V)135 mApplications Power Mgmt. in Mobile Computing, Industrial A