JMTK330N06A - параметры транзистора MOSFET, его аналоги, datasheet

..1. Size:1254K jiejie micro
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60V, 20A, 32m N-channel Power Trench MOSFETJMTK330N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 20 AApplicationsRDS(ON)_Typ(@VGS=10V 26 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 32 mW PWM Application Powe

9.1. Size:1287K jiejie micro
jmtk3006d.pdf pdf_icon

30V, 80A, 6.3m N-channel Power Trench MOSFETJMTK3006DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 80 ARDS(ON)_Typ(@VGS=10V 3.9 mWRDS(ON)_Typ(@VGS=4.5V 6.3 mWApplications Load Switch PWM Application Pow

9.2. Size:1076K jiejie micro
jmtk3005a.pdf pdf_icon

JMTK3005ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications Load Switch 30V, 100A PWM ApplicationRDS(ON)

9.3. Size:884K jiejie micro
jmtk3006b.pdf pdf_icon

JMTK3006BDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 70A Load SwitchRDS(ON)

9.4. Size:1260K jiejie micro
jmtk320n10a.pdf pdf_icon

100V, 30A, 23.1m N-channel Power Trench MOSFETJMTK320N10AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 30 AApplicationsRDS(ON)_Typ(@VGS=10V 21.4 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 23.1 mW PWM Application

9.5. Size:1287K jiejie micro
jmtk3005b.pdf pdf_icon

30V, 90A, 4.6m N-channel Power Trench MOSFETJMTK3005BProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 90 ARDS(ON)_Typ(@VGS=10V 2.9 mWRDS(ON)_Typ(@VGS=4.5V 4.6 mWApplications Load Switch PWM Application Pow

9.6. Size:982K jiejie micro
jmtk3002b.pdf pdf_icon

JMTK3002BDescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 180A Load SwitchRDS(ON)

9.7. Size:1292K jiejie micro
jmtk3006c.pdf pdf_icon

30V, 62A, 6.1m N-channel Power Trench MOSFETJMTK3006CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 62 ARDS(ON)_Typ(@VGS=10V 4.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 6.1 mW Load Switch PWM Application Pow

9.8. Size:1091K jiejie micro
jmtk340p03a.pdf pdf_icon

JMTK340P03ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -20A Load SwitchRDS(ON)

9.9. Size:881K jiejie micro
jmtk3004a.pdf pdf_icon

JMTK3004ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 100A Load SwitchRDS(ON)

9.10. Size:1287K jiejie micro
jmtk3006e.pdf pdf_icon

30V, 61A,7.0m N-channel Power Trench MOSFETJMTK3006EProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 61 ARDS(ON)_Typ(@VGS=10V 4.3 mWRDS(ON)_Typ(@VGS=4.5V 7.0 mWApplications Load Switch PWM Application Powe

9.11. Size:968K jiejie micro
jmtk3003a.pdf pdf_icon

JMTK3003ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 150A Load SwitchRDS(ON)

9.12. Size:1254K jiejie micro
jmtk3005c.pdf pdf_icon

30V, 94A, 6.0m N-channel Power Trench MOSFETJMTK3005CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 94 ARDS(ON)_Typ(@VGS=10V 3.1 mWApplications RDS(ON)_Typ(@VGS=4.5V 6.0 mW Load Switch PWM Application Pow

9.13. Size:576K jiejie micro
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