Аналоги JMTG016N04A. Основные параметры
Наименование производителя: JMTG016N04A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 210
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 9
ns
Cossⓘ - Выходная емкость: 843
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0016
Ohm
Тип корпуса:
PDFN5X6-8L
Аналог (замена) для JMTG016N04A
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подбор ⓘ MOSFET транзистора по параметрам
JMTG016N04A даташит
..1. Size:377K jiejie micro
jmtg016n04a.pdf 
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jmtg018n03a.pdf 
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jmtg040n03a.pdf 
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jmtg050p03a.pdf 
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9.3. Size:404K jiejie micro
jmtg060n06a.pdf 
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9.4. Size:1356K jiejie micro
jmtg060p03a.pdf 
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9.5. Size:568K jiejie micro
jmtg080n04d.pdf 
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jmtg062n04d.pdf 
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9.8. Size:1358K jiejie micro
jmtg080p03a.pdf 
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9.9. Size:419K jiejie micro
jmtg070n06a.pdf 
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9.10. Size:1238K jiejie micro
jmtg021n04a.pdf 
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9.11. Size:1312K jiejie micro
jmtg030p02a.pdf 
20V, -85A, 4.2m P-channel Power Trench MOSFET JMTG030P02A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 20 V 100% Vds Tested VGS(th)_Typ -0.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -85 A RDS(ON)_Typ(@VGS=-4.5V 2.3 mW RDS(ON)_Typ(@VGS=-2.5V 3.0 mW Applications RDS(ON)_Typ(@VGS=-1.8V 4.2 mW L
9.12. Size:1121K jiejie micro
jmtg035n04l.pdf 
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9.13. Size:1076K jiejie micro
jmtg027n04a.pdf 
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9.14. Size:514K jiejie micro
jmtg055n04a.pdf 
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9.15. Size:1182K jiejie micro
jmtg035n04a.pdf 
40V, 100A, 3.0m N-channel Power Trench MOSFET JMTG035N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 100 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management D G S P
9.16. Size:515K jiejie micro
jmtg040n03a.pdf 
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History: JMSL1009AU
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