JMTG016N04A - Даташиты. Аналоги. Основные параметры
Наименование производителя: JMTG016N04A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 210
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 9
ns
Cossⓘ - Выходная емкость: 843
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0016
Ohm
Тип корпуса:
PDFN5X6-8L
Аналог (замена) для JMTG016N04A
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подбор ⓘ MOSFET транзистора по параметрам
JMTG016N04A Datasheet (PDF)
..1. Size:377K jiejie micro
jmtg016n04a.pdf 
JMTG016N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 40V, 210A Load SwitchR
8.1. Size:1070K jiejie micro
jmtg018n03a.pdf 
30V, 130A, 2m N-channel Power Trench MOSFETJMTG018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 130 ARDS(ON)_Typ(@VGS=10V 1.5 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 2.0 mW Load Switch PWM Application P
9.1. Size:575K 1
jmtg040n03a.pdf 
JMTG040N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 30V, 80A Load Switch R
9.2. Size:1425K jiejie micro
jmtg050p03a.pdf 
-30V, -80A, 5.2m P-channel Power Trench MOSFETJMTG050P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS -30 V 100% Vds TESTEDVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -80 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 3.7 mWRDS(ON)_Typ(@VGS=-4.5V 5.2 mWApplications Load Swit
9.3. Size:404K jiejie micro
jmtg060n06a.pdf 
JMTG060N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V,90 A Load SwitchR
9.4. Size:1356K jiejie micro
jmtg060p03a.pdf 
-30V, -111A, 5.8m P-channel Power Trench MOSFETJMTG060P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.8 V Halogen-free; RoHS-compliantID(@VGS=-10V) -111 ARDS(ON)_Typ(@VGS=-10V 3.8 mWRDS(ON)_Typ(@VGS=-4.5V 5.8 mWApplications Load Switch PWM Applicat
9.5. Size:568K jiejie micro
jmtg080n04d.pdf 
JMTG080N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 40V, 45A Load SwitchRDS(ON)
9.6. Size:727K jiejie micro
jmtg062n04d.pdf 
JMTG062N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 55A Load SwitchRDS(ON)
9.7. Size:1592K jiejie micro
jmtg075c03d.pdf 
30V, 38A&-25A, 9.3m&27.7m N And P-channel Power Trench MOSFETJMTG075C03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters N P Unit 100% UIS TestedVDSS 30 -30 V 100% Vds TestedVGS(th)_Typ 1.6 -1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 38 -25 ARDS(ON)_Typ(@VGS=10V 6.7 19.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 27.7Applications mW
9.8. Size:1358K jiejie micro
jmtg080p03a.pdf 
-30V, -97A, 7.3m P-channel Power Trench MOSFETJMTG080P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -97 ARDS(ON)_Typ(@VGS=-10V 5.0 mWApplications RDS(ON)_Typ(@VGS=-4.5V 7.3 mW Load Switch PWM Applicatio
9.9. Size:419K jiejie micro
jmtg070n06a.pdf 
JMTG070N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 70A Load SwitchR
9.10. Size:1238K jiejie micro
jmtg021n04a.pdf 
40V, 199A, 1.9m N-channel Power Trench MOSFETJMTG021N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 199 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.9 mW Load Switch PWM Application
9.11. Size:1312K jiejie micro
jmtg030p02a.pdf 
20V, -85A, 4.2m P-channel Power Trench MOSFETJMTG030P02AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 20 V 100% Vds TestedVGS(th)_Typ -0.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -85 ARDS(ON)_Typ(@VGS=-4.5V 2.3 mWRDS(ON)_Typ(@VGS=-2.5V 3.0 mWApplicationsRDS(ON)_Typ(@VGS=-1.8V 4.2 mW L
9.12. Size:1121K jiejie micro
jmtg035n04l.pdf 
40V, 100A, 3m N-channel Power Trench MOSFETJMTG035N04LProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 ARDS(ON)_Typ(@VGS=10V 2.4 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 3.0 mWApplications Load Switch P
9.13. Size:1076K jiejie micro
jmtg027n04a.pdf 
40V, 190A, 1.8m N-channel Power Trench MOSFETJMTG027N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ(@VGS=10V 1.8 mWApplicationsRDS(ON)_Typ(@VGS=8V 2.1 mW Load Switch PWM Application P
9.14. Size:514K jiejie micro
jmtg055n04a.pdf 
JMTG055N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 75A Load SwitchRDS(ON)
9.15. Size:1182K jiejie micro
jmtg035n04a.pdf 
40V, 100A, 3.0m N-channel Power Trench MOSFETJMTG035N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementDG SP
9.16. Size:515K jiejie micro
jmtg040n03a.pdf 
JMTG040N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 80A Load SwitchRDS(ON)
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