Аналоги JMTG080N04D. Основные параметры
Наименование производителя: JMTG080N04D
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 25
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 45
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 28
ns
Cossⓘ - Выходная емкость: 167
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0096
Ohm
Тип корпуса: PDFN5X6-8L-D
Аналог (замена) для JMTG080N04D
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подбор ⓘ MOSFET транзистора по параметрам
JMTG080N04D даташит
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Другие MOSFET... JMSL1008AC
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History: JMSL1006PGQ
| JMTG28DN10D
| JMTG100N04A
| JMSL1008AC
| JMTG062N04D
