Аналоги JMTG080P03A. Основные параметры
Наименование производителя: JMTG080P03A
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 104
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 97
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 5.7
ns
Cossⓘ - Выходная емкость: 471
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007
Ohm
Тип корпуса:
PDFN5X6-8L
Аналог (замена) для JMTG080P03A
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подбор ⓘ MOSFET транзистора по параметрам
JMTG080P03A даташит
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Другие MOSFET... JMSL1008AE
, JMSL1008AG
, JMSL1008AGQ
, JMTG060P03A
, JMTG062N04D
, JMTG070N06A
, JMTG075C03D
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, JMSL1008AK
, JMSL1008AKQ
.
History: JMTG28DN10D
| JMTG100N04A
| JMSL1008AC
