JMSL1040AU. Аналоги и основные параметры
Наименование производителя: JMSL1040AU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 21 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 16.6 ns
Cossⓘ - Выходная емкость: 85 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
Тип корпуса: PDFN3X3-8L
Аналог (замена) для JMSL1040AU
- подборⓘ MOSFET транзистора по параметрам
JMSL1040AU даташит
..1. Size:336K jiejie micro
jmsl1040au.pdf 
JMSL1040AU 100V 29m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 18 A RDS(ON)_Typ (@ VGS = 10V) Halogen-free and RoHS-compliant 29 m RDS(ON)_Typ (@ VGS = 4.5V) 38 m Applications Power Management in Computing,
0.1. Size:407K jiejie micro
jmsl1040auq.pdf 
JMSL1040AUQ 100V 29m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 20 A RDS(ON)_Typ (@ VGS = 10V) 29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
0.2. Size:298K jiejie micro
jmsl1040aud.pdf 
JMSL1040AUD 100V 31m Dual N-Ch Power MOSFET Product Summary Features Parameter Low Gate Charge Value Unit VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 17 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V) 31 m RDS(ON)_Typ (@ VGS = 4.5V) 39 m Applications Power Management in C
5.1. Size:377K jiejie micro
jmsl1040agq.pdf 
JMSL1040AGQ 100V 29m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 27 A RDS(ON)_Typ (@ VGS = 10V) 29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
5.2. Size:323K jiejie micro
jmsl1040agdq.pdf 
JMSL1040AGDQ 100V 28m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 22 A RDS(ON)_Typ (@ VGS = 10V) 28 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
5.3. Size:304K jiejie micro
jmsl1040agd.pdf 
JMSL1040AGD 100V 28m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.4 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 28 m RDS(ON)_Typ (@ VGS = 4.5V) 40 m Halogen-free and RoHS-compliant Applications Power
5.4. Size:369K jiejie micro
jmsl1040ag.pdf 
JMSL1040AG 100V 29m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.9 A RDS(ON)_Typ (@ VGS = 10V) 29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 39 m Halogen-free and RoHS-compliant Applications Power Mana
5.5. Size:341K jiejie micro
jmsl1040ac jmsl1040ae.pdf 
JMSL1040AC JMSL1040AE 100V 30m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 26 A RDS(ON) (@ VGS = 10V) 30 Pb-free Lead Plating m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom
5.6. Size:280K jiejie micro
jmsl1040av.pdf 
JMSL1040AV 100V 29m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V Low Input Capacitance VGS(th)_Typ 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 4.7 A RDS(ON)_Typ (@ VGS = 10V) Excepcional RDS(ON) in Low-profile DFN2020-6L 29 m RDS(ON)_Typ (@ VGS = 4.5V) 37 m Pb-free Lead Plating Ha
5.7. Size:337K jiejie micro
jmsl1040avq.pdf 
JMSL1040AVQ 100V 29m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 10.6 A RDS(ON)_Typ (@ VGS = 10V) 29 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications U
5.8. Size:493K jiejie micro
jmsl1040ak.pdf 
JMSL1040AK 100V 32mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Halogen-free and RoHS-compliant ID (@ VGS = 10V) (1) 24 A RDS(ON)_typ (@ VGS = 10V) 32 mW RDS(ON)_typ (@ VGS = 4.5V) 43 mW Applications Power Managerment in Telecom., Industrial Automation, CE
5.9. Size:310K jiejie micro
jmsl1040apd.pdf 
JMSL1040APD 100V 31m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.3 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 31 m RDS(ON)_Typ (@ VGS = 4.5V) 40 m Halogen-free and RoHS-compliant Applications Power M
5.10. Size:285K jiejie micro
jmsl1040ay.pdf 
JMSL1040AY 100V 30m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 13 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V) 30 m RDS(ON)_Typ (@ VGS = 4.5V) 38 m Applications Power Management in Computing,
Другие MOSFET... JMSL1040AC
, JMSL1040AE
, JMSL1040AG
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, JMSL1040AUD
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