Справочник MOSFET. DMG4800LFG

 

DMG4800LFG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMG4800LFG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.94 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.44 A
   Cossⓘ - Выходная емкость: 798 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: UDFN30308
 

 Аналог (замена) для DMG4800LFG

   - подбор ⓘ MOSFET транзистора по параметрам

 

DMG4800LFG Datasheet (PDF)

 ..1. Size:161K  diodes
dmg4800lfg.pdfpdf_icon

DMG4800LFG

DMG4800LFGN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN3030-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

 6.1. Size:237K  diodes
dmg4800lk3.pdfpdf_icon

DMG4800LFG

DMG4800LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

 6.2. Size:143K  diodes
dmg4800lsd.pdfpdf_icon

DMG4800LFG

DMG4800LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D

 6.3. Size:266K  inchange semiconductor
dmg4800lk3.pdfpdf_icon

DMG4800LFG

isc N-Channel MOSFET Transistor DMG4800LK3FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... ZXMN2F30FH , ZXMN2F34FH , ZXMN2F34MA , DMG4466SSS , DMG4466SSSL , DMG4468LFG , DMG4468LK3 , DMG4496SSS , AO3400 , DMG4800LK3 , DMG4800LSD , DMG4822SSD , DMG6402LDM , DMG8880LK3 , DMG8880LSS , DMN100 , DMN2600UFB .

History: HGB042N10A | ZXM62N03G | IXTK17N120L | RFH25P10 | SSM6K210FE | FDS4897A | P0460ED

 

 
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