SLF65R180E7C - аналоги и даташиты транзистора

 

SLF65R180E7C - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLF65R180E7C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SLF65R180E7C

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLF65R180E7C Datasheet (PDF)

 ..1. Size:2512K  maple semi
 slf65r180e7c.pdf pdf_icon

SLF65R180E7C

SLF65R180E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 22A*, 650V, RDS(on),Typ = 150mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 7.1. Size:2126K  maple semi
 slf65r1k2e7.pdf pdf_icon

SLF65R180E7C

SLF65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A*, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

 8.1. Size:2495K  maple semi
 slf65r380e7c.pdf pdf_icon

SLF65R180E7C

SLF65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 8.2. Size:766K  maple semi
 slf65r950s2.pdf pdf_icon

SLF65R180E7C

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

ПОКАЗАТЬ ЕЩЁ

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