SLP65R380E7C - аналоги, параметры транзистора

SLP65R380E7C даташит

..1. Size:4689K maple semi
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SLP65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

8.1. Size:4711K maple semi
slp65r180e7c.pdf pdf_icon

SLP65R180E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 22A, 650V, RDS(on),Typ = 150m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

8.2. Size:4335K maple semi
slp65r1k2e7.pdf pdf_icon

SLP65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switching

8.3. Size:569K maple semi
slp65r420s2 slf65r420s2.pdf pdf_icon

SLP65R420S2/SLF65R420S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 650V, RDS(on)typ= 0.33 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 23nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe

Другие MOSFET... SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 , IRFP460 , SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , SLD80N02TB .