SLD80N02TB - аналоги и даташиты транзистора

 

SLD80N02TB - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLD80N02TB
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 71 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для SLD80N02TB

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLD80N02TB Datasheet (PDF)

 ..1. Size:4793K  maple semi
sld80n02tb.pdfpdf_icon

SLD80N02TB

SLD80N02TB20V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 71A, 20V, RDS(on),Typ = 3.6mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 30nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in t

 9.1. Size:614K  maple semi
sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdfpdf_icon

SLD80N02TB

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -7A, 800V, RDS(on) typ.= 0.8@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been es

 9.2. Size:626K  maple semi
sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdfpdf_icon

SLD80N02TB

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -11A, 800V, RDS(on) typ.= 0.46@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been

 9.3. Size:1048K  maple semi
sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdfpdf_icon

SLD80N02TB

SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -15A, 800V, RDS(on) typ.= 0.34@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been

Другие MOSFET... SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , IRFB4227 , SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV .

History: FDPF18N20FT | IRF9317PBF | IRF720A | IXFK32N100P | H12N65P | STP4NA80 | H12N60P

 

 
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