Справочник MOSFET. DMN100

 

DMN100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN100
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
   Qgⓘ - Общий заряд затвора: 5.5 nC
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: SC59

 Аналог (замена) для DMN100

 

 

DMN100 Datasheet (PDF)

 ..1. Size:147K  diodes
 dmn100.pdf

DMN100 DMN100

DMN100N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 per J-

 ..2. Size:89K  tysemi
 dmn100.pdf

DMN100 DMN100

Product specificationDMN100N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 pe

 0.1. Size:508K  diodes
 dmn1003uca6.pdf

DMN100 DMN100

DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Height = 0.21mm for Low Profile BVSSS RSS(ON) Max TA = +25C ESD Protection of Gate 3.2m @ VGS = 4.5V 23.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.3m @ VGS = 2.5V 16.8A Halogen and Antimony Free. Green De

 0.2. Size:430K  diodes
 dmn1002uca6.pdf

DMN100 DMN100

DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D

 0.3. Size:410K  diodes
 dmn1006uca6.pdf

DMN100 DMN100

DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features IS CSP with Footprint 2.70mm 1.81mm BVSSS RSS(ON) MAX TA = +25C Height = 0.21mm for Low Profile ESD Protection of Gate 5.9m @ VGS = 4.5V 16.6A 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.0m @ VGS = 2.5V 12.1A Halogen and Antimony Free. Green De

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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