Справочник MOSFET. DMN3007LSS

 

DMN3007LSS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN3007LSS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Qgⓘ - Общий заряд затвора: 64.2 nC
   Cossⓘ - Выходная емкость: 2714 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SO8

 Аналог (замена) для DMN3007LSS

 

 

DMN3007LSS Datasheet (PDF)

 ..1. Size:151K  diodes
 dmn3007lss.pdf

DMN3007LSS DMN3007LSS

DMN3007LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 7m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 10m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Connections: See Di

 8.1. Size:544K  1
 dmn3009lfvw-7.pdf

DMN3007LSS DMN3007LSS

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 8.2. Size:591K  diodes
 dmn3009sk3.pdf

DMN3007LSS DMN3007LSS

DMN3009SK3 Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 5.5m @ VGS = 10V 80A 30V Halogen and Antimony Free. Green Device (Note 3) 9.0m @ VGS = 4.5V 60A Qualified to AEC-Q101 Standards for H

 8.3. Size:210K  diodes
 dmn3005lk3.pdf

DMN3007LSS DMN3007LSS

DMN3005LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals Connections: See

 8.4. Size:544K  diodes
 dmn3009lfvw.pdf

DMN3007LSS DMN3007LSS

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 8.5. Size:505K  diodes
 dmn3008sfg.pdf

DMN3007LSS DMN3007LSS

DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures on-state losses are minimized ID max V(BR)DSS RDS(ON) max TC = +25C Small, form factor thermally efficient package enables higher density end products 4.4m @ VGS = 10V 62A 30V Occupies only 33% of the board area occupied by SO-8 enabling

 8.6. Size:265K  inchange semiconductor
 dmn3009sk3.pdf

DMN3007LSS DMN3007LSS

isc N-Channel MOSFET Transistor DMN3009SK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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