MPF9N20 - Даташиты. Аналоги. Основные параметры

DescriptionMDT9N20 the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitV 200 VDSI 9 ADR 0.27 DS(ON).Typ

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N

TMP9N50/TMPF9N50TMP9N50G/TMPF9N50GVDSS = 550 V @TjmaxFeaturesID = 9A Low gate chargeRDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHSTMP9N50G / TMPF9N50G TO-220 / T

TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 9A

TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A

TMP9N60/TMPF9N60TMP9N60G/TMPF9N60GVDSS = 660 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP9N60 / TMPF9N60 TO-220 / TO-220F TMP9N60 / TMPF9N60 RoHSTMP9