MPF9N20 datasheet, подбор замены

 ..1. Size:646K  cn minos
 mp9n20 mpf9n20 mdp9n20 mdt9n20.pdf 

Description MDT9N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 9 A D R 0.27 DS(ON).Typ

 9.1. Size:403K  trinnotech
 tmp9n90 tmpf9n90.pdf 

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N

 9.2. Size:333K  trinnotech
 tmp9n50 tmpf9n50.pdf 

TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G VDSS = 550 V @Tjmax Features ID = 9A Low gate charge RDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHS TMP9N50G / TMPF9N50G TO-220 / T

 9.3. Size:609K  trinnotech
 tmp9n70 tmpf9n70.pdf 

TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 9A

 9.4. Size:619K  trinnotech
 tmp9n50s tmpf9n50s.pdf 

TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A

 9.5. Size:347K  trinnotech
 tmp9n60 tmpf9n60.pdf 

TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G VDSS = 660 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP9N60 / TMPF9N60 TO-220 / TO-220F TMP9N60 / TMPF9N60 RoHS TMP9