AP3P06MI - аналоги и даташиты транзистора

 

AP3P06MI - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP3P06MI
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.4 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для AP3P06MI

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP3P06MI Datasheet (PDF)

 ..1. Size:1865K  cn apm
ap3p06mi.pdfpdf_icon

AP3P06MI

AP3P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS DR

 9.1. Size:191K  ape
ap3p080n.pdfpdf_icon

AP3P06MI

AP3P080NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -30VD Small Package Outline RDS(ON) 80m Surface Mount Device ID -3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3P080 series are from Advanced Power innovated designand silicon process technology to achieve the

 9.2. Size:206K  ape
ap3p050h.pdfpdf_icon

AP3P06MI

AP3P050HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50mG Fast Switching Characteristic ID -15A RoHS Compliant & Halogen-FreeSDescriptionAP3P050 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

 9.3. Size:137K  ape
ap3p010yt.pdfpdf_icon

AP3P06MI

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

Другие MOSFET... AP80N06D , AP85N03NF , AP8G04S , AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , STP65NF06 , AP4606B , AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D .

History: 3LP01C | FDC3612

 

 
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