AP65R950 - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP65R950
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 25.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 26.4 ns
Cossⓘ - Выходная емкость: 13.7 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
Тип корпуса: TO252
Аналог (замена) для AP65R950
AP65R950 Datasheet (PDF)
apj10n65d ap65r950.pdf
APJ10N65D (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ10N65D is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type720V IDM =10A
apj10n65f apj10n65t apj10n65p ap65r950.pdf
APJ10N65FITIP (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65F/T/P is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V
apj30n65f apj30n65p apj30n65t ap65r340.pdf
APJ30N65FIPIT (AP65R340) 650V N-Channel Enhancement Mode MOSFET Description The APJ30N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type740V
Другие MOSFET... AP100N08D , AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , APG80N10P , APG80N10T , APJ10N65D , 12N60 , APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S , AP10G06NF , AP10G06S .
Список транзисторов
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