AP10G06NF - аналоги и даташиты транзистора

 

AP10G06NF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP10G06NF
   Тип транзистора: MOSFET
   Полярность: NP
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10(9.5) A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 14.2(19.8) ns
   Cossⓘ - Выходная емкость: 86(97.3) pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04(0.07) Ohm
   Тип корпуса: PDFN5X6-8L
 

 Аналог (замена) для AP10G06NF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP10G06NF Datasheet (PDF)

 ..1. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G06NF

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS DR

 7.1. Size:1977K  cn apm
 ap10g06s.pdf pdf_icon

AP10G06NF

AP10G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12.5A DS DR

 8.1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G06NF

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS DR

 8.2. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G06NF

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APJ10N65D , AP65R950 , APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S , 5N60 , AP10G06S , AP10H04DF , AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , APG40N10D , APG40N10DF .

History: APG80N10T | ZXMP3F37N8 | DCCF080M120A2

 

 
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