AP180N03T datasheet, аналоги, основные параметры
Наименование производителя: AP180N03T 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 187 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6.3 ns
Cossⓘ - Выходная емкость: 720 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: TO263
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Аналог (замена) для AP180N03T
- подборⓘ MOSFET транзистора по параметрам
AP180N03T даташит
ap180n03p ap180n03t.pdf
AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS D R
ap180n03d.pdf
AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS D R
ap180n04nf.pdf
AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS D R
Другие IGBT... AP150N10T, AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P, AP160N10T, AP180N03P, 3401, AP180N08P, AP180N08T, AP18N20D, AP18N20Y, AP190N15P, AP190N15T, AP200N12P, AP200N12T
Параметры MOSFET. Взаимосвязь и компромиссы
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