AP180N08T - аналоги и даташиты транзистора

 

AP180N08T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP180N08T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 284 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 58 ns
   Cossⓘ - Выходная емкость: 808 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AP180N08T

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP180N08T Datasheet (PDF)

 ..1. Size:1759K  cn apm
 ap180n08p ap180n08t.pdf pdf_icon

AP180N08T

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS DR

 7.1. Size:1530K  cn apm
 ap180n03d.pdf pdf_icon

AP180N08T

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS DR

 7.2. Size:1647K  cn apm
 ap180n03p ap180n03t.pdf pdf_icon

AP180N08T

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS DR

 7.3. Size:1493K  cn apm
 ap180n04nf.pdf pdf_icon

AP180N08T

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP160N04T , AP160N08P , AP160N08T , AP160N10P , AP160N10T , AP180N03P , AP180N03T , AP180N08P , AO4468 , AP18N20D , AP18N20Y , AP190N15P , AP190N15T , AP200N12P , AP200N12T , AP20N65F , AP20N65P .

 

 
Back to Top

 


 
.