AP20N65F datasheet, подбор замены

 ..1. Size:1805K  cn apm
 ap20n65f ap20n65p.pdf 

AP20N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP20N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

 9.1. Size:234K  ape
 ap20n15agh.pdf 

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching,

 9.2. Size:94K  ape
 ap20n15gh-hf.pdf 

AP20N15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast

 9.3. Size:94K  ape
 ap20n15agh-hf.pdf 

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 9.4. Size:235K  ape
 ap20n15gh.pdf 

AP20N15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description AP20N15 series are from Advanced Power innovated design and silicon G D S process technology to achieve

 9.5. Size:60K  ape
 ap20n15agi-hf.pdf 

AP20N15AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description AP20N15A series are from Advanced Power innovated design and silicon process technology to achieve the lo

 9.6. Size:212K  ape
 ap20n15gi.pdf 

AP20N15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 150V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP20N15 series are from Advanced Power innovated design and silicon process technology to achieve the low

 9.7. Size:96K  ape
 ap20n15agp-hf.pdf 

AP20N15AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 9.8. Size:94K  ape
 ap20n15gi-hf.pdf 

AP20N15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 150V D Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D TO-220CFM(I)

 9.9. Size:1105K  allpower
 ap20n06t.pdf 

 9.10. Size:761K  allpower
 ap20n100q.pdf 

 9.11. Size:1438K  cn apm
 ap20n06s.pdf 

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R

 9.12. Size:1150K  cn apm
 ap20n02bf.pdf 

AP20N02BF 20V N-Channel Enhancement Mode MOSFET Description The AP20N02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS D R

 9.13. Size:1923K  cn apm
 ap20n03d.pdf 

AP20N03D 30V N-Channel Enhancement Mode MOSFET Description The AP20N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =20 A DS D R

 9.14. Size:1359K  cn apm
 ap20n10d.pdf 

AP20N10D 100V N-Channel Enhancement Mode MOSFET Description The AP20N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =20A DS D R Type 65m @ V =10V DS(ON) GS Applic

 9.15. Size:1314K  cn apm
 ap20n02df.pdf 

AP20N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP20N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS D R

 9.16. Size:925K  cn apm
 ap20n06d.pdf 

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS D R

 9.17. Size:1581K  cn apm
 ap20n06bd.pdf 

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R