AP30N06T - аналоги и даташиты транзистора

 

AP30N06T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP30N06T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 16.6 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AP30N06T

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP30N06T Datasheet (PDF)

 ..1. Size:1645K  cn apm
 ap30n06p ap30n06t.pdf pdf_icon

AP30N06T

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

 7.1. Size:1427K  cn apm
 ap30n06df.pdf pdf_icon

AP30N06T

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

 7.2. Size:1476K  cn apm
 ap30n06y.pdf pdf_icon

AP30N06T

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

 7.3. Size:1207K  cn apm
 ap30n06d.pdf pdf_icon

AP30N06T

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP18N20Y , AP190N15P , AP190N15T , AP200N12P , AP200N12T , AP20N65F , AP20N65P , AP30N06P , IRF840 , AP40N20P , AP40N20T , AP45P06F , AP45P06P , AP45P06T , AP4N65D , AP4N65Y , AP4N65F .

 

 
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