AP30N06T - аналоги, параметры транзистора - Справочник транзисторов

AP30N06T даташит

..1. Size:1645K cn apm
ap30n06p ap30n06t.pdf pdf_icon

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

7.1. Size:1427K cn apm
ap30n06df.pdf pdf_icon

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

7.2. Size:1476K cn apm
ap30n06y.pdf pdf_icon

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

7.3. Size:1207K cn apm
ap30n06d.pdf pdf_icon

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R

Другие MOSFET... AP18N20Y , AP190N15P , AP190N15T , AP200N12P , AP200N12T , AP20N65F , AP20N65P , AP30N06P , 20N60 , AP40N20P , AP40N20T , AP45P06F , AP45P06P , AP45P06T , AP4N65D , AP4N65Y , AP4N65F .