AP50N06P - аналоги и даташиты транзистора

 

AP50N06P - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP50N06P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AP50N06P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP50N06P Datasheet (PDF)

 ..1. Size:824K  cn apm
 ap50n06p ap50n06t.pdf pdf_icon

AP50N06P

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.1. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06P

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.2. Size:1589K  cn apm
 ap50n06bd ap50n06by.pdf pdf_icon

AP50N06P

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS DR

 7.3. Size:2272K  cn apm
 ap50n06d.pdf pdf_icon

AP50N06P

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP45P06P , AP45P06T , AP4N65D , AP4N65Y , AP4N65F , AP4N65P , AP50N06BD , AP50N06BY , IRFB4227 , AP50N06T , AP50P06P , AP50P06T , AP5G03S , AP5G03DF , AP5N50F , AP5N50P , AP5N50T .

History: AP4N65P

 

 
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