AP80P10P datasheet, подбор замены

 ..1. Size:1257K  cn apm
 ap80p10p ap80p10t.pdf 

AP80P10PIT -100V P-Channel Enhancement Mode MOSFET Description The AP80P10P/T uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-80A DS D R

 7.1. Size:1085K  cn apm
 ap80p10d.pdf 

AP80P10D -100V P-Channel Enhancement Mode MOSFET Description The AP80P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-80A DS D R

 9.1. Size:508K  allpower
 ap80p04k.pdf 

 9.2. Size:1641K  cn apm
 ap80p06d.pdf 

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

 9.3. Size:1788K  cn apm
 ap80p04d.pdf 

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

 9.4. Size:3546K  cn apm
 ap80p01nf.pdf 

AP80P01NF -12V P-Channel Enhancement Mode MOSFET Description The AP80P01NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-80A DS D R

 9.5. Size:1789K  cn apm
 ap80p06nf.pdf 

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

 9.6. Size:1735K  cn apm
 ap80p04nf.pdf 

AP80P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP80P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

 9.7. Size:1715K  cn apm
 ap80p06p ap80p06t.pdf 

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R