AP3409MI - Даташиты. Аналоги. Основные параметры

AP3409MI -30V P-Channel Enhancement Mode MOSFET Description The AP3409MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-12A DS DR

AP3403GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS -30V DSimple Drive Requirement RDS(ON) 200m Fast Switching ID - 10A GSDescriptionGDSAdvanced Power MOSFETs utilized advanced processing techniques to TO-252(H)achieve the lowest poss

AP3402GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 35VD Single Drive Requirement RDS(ON) 18m Surface Mount Package ID 38AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device de

AP3405GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -8.6AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO

AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)

AIIP ERAP3400S DATA SHEET N-Channel pwer MOSFETI Descriptions N MOS N- CHA NNEL MOSFET in a SOT23 Plastic Package. SOT23 oI Features V s(V) = 30V oA lo = 5.8 (VGs = 10V) s 2Ro coN)

AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

AP3401AI -30V P-Channel Enhancement Mode MOSFET Description The AP3401AI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS DR

AP3400BI 30V N-Channel Enhancement Mode MOSFET Description The AP3400BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

AP3401MI 30V P-Channel Enhancement Mode MOSFET Description The AP3401MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS DR

AP3404MI 30V N-Channel Enhancement Mode MOSFET Description The AP3404MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS DR

AP3400DI 20V N-Channel Enhancement Mode MOSFET Description The AP3400DI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS DR

AP3400AI 30V N-Channel Enhancement Mode MOSFET Description The AP3400AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

AP3407AI -30V P-Channel Enhancement Mode MOSFET Description The AP3407AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS DR

AP3404BI 30V N-Channel Enhancement Mode MOSFET Description The AP3404BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS DR

AP3400CI 30V N-Channel Enhancement Mode MOSFET Description The AP3400CI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS DR

AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

AP3407MI -30V P-Channel Enhancement Mode MOSFET Description The AP3407MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS DR