AP9928A - Даташиты. Аналоги. Основные параметры

AP9928A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9928A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =10.5A DS DR

AP9928GEOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 23m G1S1Optimal DC/DC battery application S1 ID 5A TSSOP-8D1DescriptionD1 D2The Advanced Power MOSFETs from APEC provide theG1 G

AP9928GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V D2D2D1Capable of 2.5V gate drive RDS(ON) 23m D1Surface mount package ID 7.3A G2S2G1SO-8S1DescriptionD1 D2The Advanced Power MOSFETs from APEC provide theG1 G2designer

AP9926GM-HFHalogen-Free ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series are from Advanced Power innovated design andsilicon process te

AP9923GEO-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low On-Resistance BVDSS -12VS2S2D2 Small & Thin Package RDS(ON) 25mG1 Capable of 1.8V Gate Drive ID -7AS1S1TSSOP-8D1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide thedesigner with the best c

AP9922GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low on-resistance BVDSS 20VS2S2D2 Capable of 1.8V Gate Drive RDS(ON) 16mG1S1 Optimal DC/DC Battery Application S1 ID 6.4ATSSOP-8D1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide thedesigner wi

AP9926GOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 28m G1S1Low drive current S1 ID 4.6A TSSOP-8D1Surface mount package DescriptionD2The Advanced Power MOSFETs fr

AP9924AGO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 22m Halogen Free & RoHS Compliant Product ID 5AG2S2S2DDescriptionG1S1S1TSSOP-8DAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1

AP9924GORoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low on-resistance S2 BVDSS 20VS2D Capable of 2.5V gate drive RDS(ON) 20mG1S1S1 RoHS Compliant ID 6.8ATSSOP-8DDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, G2G1ruggedized devic

AP9920GEOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 30V S2S2D2Capable of 2.5V gate drive RDS(ON) 28m G1S1Optimal DC/DC battery application S1 ID 4.9A TSSOP-8D1 RoHS compliantDescriptionThe Advanced Power MOSFE

AP9926GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series ar

AP9922AGEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 1.8V Gate Drive RDS(ON) 18mG1S1 Optimal DC/DC Battery Application S1 ID 6ATSSOP-8D1 Halogen Free & RoHS Compliant ProductDescriptionD1 D2AP9922A series are from Advanced Power innovated des

AP9926GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD2D2 Capable of 2.5V gate drive D1 RDS(ON) 30mD1 Low drive current ID 6AG2S2 Surface mount packageG1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide the D1 D2designer with the best combination of fast sw

AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1

AP9923GEO-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low On-Resistance BVDSS -12VS2S2D2 Small & Thin Package RDS(ON) 25mG1 Capable of 1.8V Gate Drive ID -7AS1S1TSSOP-8D1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide thedesigner with the best c

AP9922GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low on-resistance BVDSS 20VS2S2D2 Capable of 1.8V Gate Drive RDS(ON) 16mG1S1S1 Optimal DC/DC Battery Application ID 6.4ATSSOP-8D1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide thedesigner wi

AP9926A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9926A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS DR