AP80N06NF - Даташиты. Аналоги. Основные параметры

   Наименование производителя: AP80N06NF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 87 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.5 ns
   Cossⓘ - Выходная емкость: 331.5 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: PDFN5X6-8L

Аналог (замена) для AP80N06NF

- подбор ⓘ MOSFET транзистора по параметрам

AP80N06NF Datasheet (PDF)

..1. Size:2440K cn apm
ap80n06nf.pdf pdf_icon

AP80N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP80N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80A DS DR

7.1. Size:2631K cn apm
ap80n06d.pdf pdf_icon

AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS DR

8.1. Size:570K 1
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8.2. Size:1965K 1
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8.3. Size:175K ape
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AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

8.4. Size:1395K cn apm
ap80n07f.pdf pdf_icon

AP80N07F 68V N-Channel Enhancement Mode MOSFET Description The AP80N07F uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR

8.5. Size:1135K cn apm
ap80n02nf.pdf pdf_icon

AP80N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80A DS DR

8.6. Size:1548K cn apm
ap80n07p ap80n07t.pdf pdf_icon

AP80N07PIT 68V N-Channel Enhancement Mode MOSFET Description The AP80N07P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR

8.7. Size:1459K cn apm
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AP80N07D 68V N-Channel Enhancement Mode MOSFET Description The AP80N07D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS DR

8.8. Size:1838K cn apm
ap80n03df.pdf pdf_icon

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR

8.9. Size:1216K cn apm
ap80n03d.pdf pdf_icon

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS DR

8.10. Size:1407K cn apm
ap80n04df.pdf pdf_icon

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR

8.11. Size:2217K cn apm
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AP80N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80 A DS DR

8.12. Size:1583K cn apm
ap80n03nf.pdf pdf_icon

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR

8.13. Size:1651K cn apm
ap80n04d.pdf pdf_icon

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR

8.14. Size:3601K cn apm
ap80n08nf.pdf pdf_icon

AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR

8.15. Size:2412K cn apm
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AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR

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