AP80P04D - аналоги и даташиты транзистора

 

AP80P04D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP80P04D
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 52.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35.2 ns
   Cossⓘ - Выходная емкость: 790 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP80P04D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP80P04D Datasheet (PDF)

 ..1. Size:1788K  cn apm
 ap80p04d.pdf pdf_icon

AP80P04D

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS DR

 7.1. Size:1735K  cn apm
 ap80p04nf.pdf pdf_icon

AP80P04D

AP80P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP80P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS DR

 8.1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P04D

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 8.2. Size:3546K  cn apm
 ap80p01nf.pdf pdf_icon

AP80P04D

AP80P01NF -12V P-Channel Enhancement Mode MOSFET Description The AP80P01NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-80A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP80N03D , AP80N03DF , AP80N03NF , AP80N04D , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , IRF540 , AP80P04NF , AP80P06D , , , , , , .

 

 
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