AP15N06S. Аналоги и основные параметры

Наименование производителя: AP15N06S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 145 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm

Тип корпуса: SOP8

Аналог (замена) для AP15N06S

- подборⓘ MOSFET транзистора по параметрам

 

AP15N06S даташит

 ..1. Size:1684K  cn apm
 ap15n06s.pdf pdf_icon

AP15N06S

AP15N06S 60V N-Channel Enhancement Mode MOSFET Description The AP15N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =15A DS D R

 8.1. Size:216K  ape
 ap15n03ghj-hf.pdf pdf_icon

AP15N06S

AP15N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G RoHS Compliant S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage a

 8.2. Size:93K  ape
 ap15n03gi.pdf pdf_icon

AP15N06S

AP15N03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 8.3. Size:209K  ape
 ap15n03gj.pdf pdf_icon

AP15N06S

AP15N03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage applications such as

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