Справочник MOSFET. ZXMD63N03X

 

ZXMD63N03X MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMD63N03X
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.3 A
   Qgⓘ - Общий заряд затвора: 8 nC
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: MSOP8

 Аналог (замена) для ZXMD63N03X

 

 

ZXMD63N03X Datasheet (PDF)

 ..1. Size:332K  diodes
 zxmd63n03x.pdf

ZXMD63N03X ZXMD63N03X

ZXMD63N03XDUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-res

 6.1. Size:156K  diodes
 zxmd63n02x.pdf

ZXMD63N03X ZXMD63N03X

ZXMD63N02XDUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.13; I =2.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo

 8.1. Size:322K  diodes
 zxmd63c02x.pdf

ZXMD63N03X ZXMD63N03X

ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien

 8.2. Size:378K  diodes
 zxmd63c03x.pdf

ZXMD63N03X ZXMD63N03X

ZXMD63C03X30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3AP-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low volt

 8.3. Size:204K  diodes
 zxmd63p02x.pdf

ZXMD63N03X ZXMD63N03X

ZXMD63P02XDUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo

 8.4. Size:339K  diodes
 zxmd63p03x.pdf

ZXMD63N03X ZXMD63N03X

ZXMD63P03XDUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-r

 8.5. Size:204K  zetex
 zxmd63c02x.pdf

ZXMD63N03X ZXMD63N03X

ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien

Другие MOSFET... DMN3730UFB4 , DMN4468LSS , DMN4800LSS , DMN4800LSSL , DMS3016SFG , DMS3016SSSA , ZXM61N03F , ZXM62N03G , CEP83A3 , ZXMN3A01E6 , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 .

 

 
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