ZXMD63N03X. Аналоги и основные параметры

Наименование производителя: ZXMD63N03X

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.3 A

Электрические характеристики

Cossⓘ - Выходная емкость: 290 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: MSOP8

Аналог (замена) для ZXMD63N03X

- подборⓘ MOSFET транзистора по параметрам

 

ZXMD63N03X даташит

 ..1. Size:332K  diodes
 zxmd63n03x.pdf pdf_icon

ZXMD63N03X

ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-res

 6.1. Size:156K  diodes
 zxmd63n02x.pdf pdf_icon

ZXMD63N03X

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Lo

 8.1. Size:322K  diodes
 zxmd63c02x.pdf pdf_icon

ZXMD63N03X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

 8.2. Size:378K  diodes
 zxmd63c03x.pdf pdf_icon

ZXMD63N03X

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low volt

ПОКАЗАТЬ ЕЩЁ

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