AP2301BI - описание и поиск аналогов

 ..1. Size:1483K  cn apm
 ap2301bi.pdf 

AP2301BI -20V P-Channel Enhancement Mode MOSFET Description The AP2301BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-2.3A DS D R

 7.1. Size:93K  ape
 ap2301bgn-hf.pdf 

AP2301BGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.8A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 7.2. Size:2119K  allpower
 ap2301b.pdf 

 8.1. Size:93K  ape
 ap2301agn.pdf 

AP2301AGN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97m D Surface Mount Device ID - 3.3A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 8.2. Size:56K  ape
 ap2301agn-hf.pdf 

AP2301AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,l

 8.3. Size:93K  ape
 ap2301gn.pdf 

AP2301GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.6A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 8.4. Size:96K  ape
 ap2301en-hf.pdf 

AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

 8.5. Size:97K  ape
 ap2301gn-hf.pdf 

AP2301GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.6A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resi

 8.6. Size:59K  ape
 ap2301n-hf.pdf 

AP2301N-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switchi

 8.7. Size:150K  ape
 ap2301en.pdf 

AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

 8.8. Size:1595K  allpower
 ap2301.pdf 

2301 P-Channel 20-V(D-S) MOSFET DATA SHEET DESCRIPTION D The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -20V 64m

 8.9. Size:868K  cn vbsemi
 ap2301n.pdf 

 8.10. Size:1798K  cn apm
 ap2301ai.pdf 

AP2301AI -20V P-Channel Enhancement Mode MOSFET Description The AP2301AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-3.3A DS D R