AP2311MI - описание и поиск аналогов

 ..1. Size:1188K  cn apm
 ap2311mi.pdf 

AP2311MI -12V P-Channel Enhancement Mode MOSFET Description The AP2311MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-7.0A DS D R

 8.1. Size:120K  ape
 ap2311gn.pdf 

AP2311GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 8.2. Size:125K  ape
 ap2311gn-hf.pdf 

AP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resi

 8.3. Size:50K  ape
 ap2311gk-hf.pdf 

AP2311GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Lower Gate Charge RDS(ON) 250m S Fast Switching Characteristic ID - 2.4A D RoHS Compliant & Halogen-Free SOT-223 G Description Advanced Power MOSFETs from APEC

 8.4. Size:3068K  cn vbsemi
 ap2311gn.pdf 

AP2311GN www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/

 8.5. Size:1157K  cn apm
 ap2311ai.pdf 

AP2311AI -12V P-Channel Enhancement Mode MOSFET Description The AP2311AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-5.8A DS D R