AP50N06NF. Аналоги и основные параметры

Наименование производителя: AP50N06NF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 145 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm

Тип корпуса: PDFN5X6-8L

Аналог (замена) для AP50N06NF

- подборⓘ MOSFET транзистора по параметрам

 

AP50N06NF даташит

 ..1. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06NF

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 7.1. Size:2029K  allpower
 ap50n06k.pdf pdf_icon

AP50N06NF

 7.2. Size:824K  cn apm
 ap50n06p ap50n06t.pdf pdf_icon

AP50N06NF

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 7.3. Size:1589K  cn apm
 ap50n06bd ap50n06by.pdf pdf_icon

AP50N06NF

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R

ПОКАЗАТЬ ЕЩЁ

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