AP50N10P - описание и поиск аналогов

 ..1. Size:801K  cn apm
 ap50n10p.pdf 

AP50N10P 100V N-Channel Enhancement Mode MOSFET Description The AP50N10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =50 A DS D R

 7.1. Size:1546K  cn apm
 ap50n10d.pdf 

AP50N10D 100V N-Channel Enhancement Mode MOSFET Description The AP50N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =50A DS D R

 9.1. Size:2029K  allpower
 ap50n06k.pdf 

 9.2. Size:623K  allpower
 ap50n04gd.pdf 

 9.3. Size:645K  allpower
 ap50n04k.pdf 

 9.4. Size:557K  allpower
 ap50n04qd.pdf 

 9.5. Size:523K  allpower
 ap50n04q.pdf 

 9.6. Size:2440K  cn apm
 ap50n06nf.pdf 

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 9.7. Size:824K  cn apm
 ap50n06p ap50n06t.pdf 

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 9.8. Size:1589K  cn apm
 ap50n06bd ap50n06by.pdf 

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R

 9.9. Size:1079K  cn apm
 ap50n03df.pdf 

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R

 9.10. Size:2272K  cn apm
 ap50n06d.pdf 

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 9.11. Size:3648K  cn apm
 ap50n06df.pdf 

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 9.12. Size:1666K  cn apm
 ap50n03ad.pdf 

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R

 9.13. Size:973K  cn apm
 ap50n05d.pdf 

AP50N05D 50V N-Channel Enhancement Mode MOSFET Description The AP50N05D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 50V I =50 A DS D R

 9.14. Size:1736K  cn apm
 ap50n03s.pdf 

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

 9.15. Size:1600K  cn apm
 ap50n06y.pdf 

AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS D R

 9.16. Size:1965K  cn apm
 ap50n03d.pdf 

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

 9.17. Size:1356K  cn apm
 ap50n20mp.pdf 

AP50N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP50N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge

 9.18. Size:851K  cn apm
 ap50n04d.pdf 

AP50N04D 40V N-Channel Enhancement Mode MOSFET Description The AP50N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =50 A DS D R