AP180N10MP. Аналоги и основные параметры

Наименование производителя: AP180N10MP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 148 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 645 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm

Тип корпуса: TO247

Аналог (замена) для AP180N10MP

- подборⓘ MOSFET транзистора по параметрам

 

AP180N10MP даташит

 ..1. Size:1543K  cn apm
 ap180n10mp.pdf pdf_icon

AP180N10MP

AP180N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP180N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =180A DS D R

 8.1. Size:746K  allpower
 ap180n03g.pdf pdf_icon

AP180N10MP

 8.2. Size:1530K  cn apm
 ap180n03d.pdf pdf_icon

AP180N10MP

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS D R

 8.3. Size:1647K  cn apm
 ap180n03p ap180n03t.pdf pdf_icon

AP180N10MP

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS D R

ПОКАЗАТЬ ЕЩЁ

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