AP180N10MP - аналоги, даташиты, параметры транзистора

AP180N10MP Datasheet (PDF)

..1. Size:1543K cn apm
ap180n10mp.pdf pdf_icon

AP180N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP180N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =180A DS DR

8.1. Size:1530K cn apm
ap180n03d.pdf pdf_icon

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS DR

8.2. Size:1647K cn apm
ap180n03p ap180n03t.pdf pdf_icon

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS DR

8.3. Size:1493K cn apm
ap180n04nf.pdf pdf_icon

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS DR