ZXMN3A04DN8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMN3A04DN8
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.8 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 8.5 A
Общий заряд затвора (Qg): 19.9 nC
Выходная емкость (Cd): 1890 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
Тип корпуса: SO8
Аналог (замена) для ZXMN3A04DN8
ZXMN3A04DN8 Datasheet (PDF)
zxmn3a04dn8.pdf
ZXMN3A04DN8DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resistan
zxmn3a04k.pdf
ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista
zxmn3a04ktc.pdf
ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista
zxmn3a02n8.pdf
ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance
zxmn3a01z.pdf
A Product Line of Diodes IncorporatedZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A
zxmn3a06dn8.pdf
ZXMN3A06DN8DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resista
zxmn3a03e6.pdf
ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan
zxmn3a01f.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn3a02x8.pdf
ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
zxmn3a01e6.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
zxmn3a01f.pdf
Product specificationZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from TY utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23
zxmn3a01e6tc.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
zxmn3a03e6ta.pdf
ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan
zxmn3a01ftc.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn3a02x8ta.pdf
ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
zxmn3a01fta.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn3a02n8ta.pdf
ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance
zxmn3a03e6tc.pdf
ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan
zxmn3a01e6ta.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
zxmn3a02x8tc.pdf
ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
Другие MOSFET... ZXM61N03F , ZXM62N03G , ZXMD63N03X , ZXMN3A01E6 , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , IRF1405 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH .
