Справочник MOSFET. ZXMN3A04K

 

ZXMN3A04K Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3A04K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 10.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18.4 A
   Cossⓘ - Выходная емкость: 1890 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
   Тип корпуса: TO252 DPAK
     - подбор MOSFET транзистора по параметрам

 

ZXMN3A04K Datasheet (PDF)

 ..1. Size:150K  diodes
 zxmn3a04k.pdf pdf_icon

ZXMN3A04K

ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista

 0.1. Size:148K  zetex
 zxmn3a04ktc.pdf pdf_icon

ZXMN3A04K

ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista

 6.1. Size:188K  diodes
 zxmn3a04dn8.pdf pdf_icon

ZXMN3A04K

ZXMN3A04DN8DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resistan

 7.1. Size:180K  diodes
 zxmn3a02n8.pdf pdf_icon

ZXMN3A04K

ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ZXM62N03G , ZXMD63N03X , ZXMN3A01E6 , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , SPW47N60C3 , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , ZXMN3F318DN8 .

History: HGN012N03AL | BF1206F | RF1S70N06SM | TK3A60DA | 4N65KL-T2Q-R | MTB23C04J4

 

 
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