AP30N06D - аналоги, даташиты, параметры транзистора

AP30N06D Datasheet (PDF)

..1. Size:1207K cn apm
ap30n06d.pdf pdf_icon

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS DR

0.1. Size:1427K cn apm
ap30n06df.pdf pdf_icon

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

7.1. Size:1476K cn apm
ap30n06y.pdf pdf_icon

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

7.2. Size:1645K cn apm
ap30n06p ap30n06t.pdf pdf_icon

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

Другие MOSFET... AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF , IRFB7545 , AP30N06DF , AP30N06Y , AP30N10D , , , , , .