AP50P10D - описание и поиск аналогов

 ..1. Size:738K  cn apm
 ap50p10d.pdf 

AP50P10D -100V P-Channel Enhancement Mode MOSFET Description The AP50P10D uses advanced trench technology and design to provide excellent R with low gat DS(ON) e charge. It can be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-50A DS D R

 7.1. Size:1276K  cn apm
 ap50p10nf.pdf 

AP50P10NF -100V P-Channel Enhancement Mode MOSFET Description The AP50P10NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-50A DS D R

 7.2. Size:1704K  cn apm
 ap50p10p.pdf 

AP50P10P -100V P-Channel Enhancement Mode MOSFET Description The AP50P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-50 A DS D R

 9.1. Size:164K  ape
 ap50pn520r.pdf 

AP50PN520R Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 0.52 Simple Drive Requirement ID 12A G RoHS Compliant & Halogen-Free S Description AP50PN520 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 9.2. Size:954K  allpower
 ap50p20q.pdf 

 9.3. Size:634K  allpower
 ap50p20k.pdf 

 9.4. Size:800K  allpower
 ap50p06k.pdf 

 9.5. Size:2802K  cn apm
 ap50p02df.pdf 

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D 6.8m ) R

 9.6. Size:1281K  cn apm
 ap50p03d.pdf 

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R

 9.7. Size:1388K  cn apm
 ap50p03df.pdf 

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS D R

 9.8. Size:1674K  cn apm
 ap50p04d.pdf 

AP50P04D -40V P-Channel Enhancement Mode MOSFET Description The AP50P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

 9.9. Size:1489K  cn apm
 ap50p04df.pdf 

AP50P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP50P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

 9.10. Size:1575K  cn apm
 ap50p06p ap50p06t.pdf 

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS D R

 9.11. Size:1629K  cn apm
 ap50p03nf.pdf 

AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R