AP5N10MI - аналоги и даташиты транзистора

 

AP5N10MI - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP5N10MI
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для AP5N10MI

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP5N10MI Datasheet (PDF)

 ..1. Size:1712K  cn apm
 ap5n10mi.pdf pdf_icon

AP5N10MI

AP5N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

 8.1. Size:1620K  cn apm
 ap5n10si.pdf pdf_icon

AP5N10MI

AP5N10SI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

 8.2. Size:1018K  cn apm
 ap5n10bi.pdf pdf_icon

AP5N10MI

AP5N10BI100V N-Channel Enhancement Mode MOSFETDescriptionThe AP5N10BI uses advanced APM-SGTII technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.General FeaturesV = 100V I =5.0ADS DR

 8.3. Size:1365K  cn apm
 ap5n10bsi.pdf pdf_icon

AP5N10MI

AP5N10BSI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BSI uses advanced Trench technologyto provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP50P10D , AP50P10NF , AP50P10P , AP55N10F , AP5N04MI , AP5N06MI , AP5N10BI , AP5N10BSI , IRF640N , AP5N10SI , , , , , , , .

History: AP5N04MI | AP5N10SI | AP5N06MI

 

 
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